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HN1B01FDW1T1G

HN1B01FDW1T1G
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specificazioni

categorie
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
60 V
Collector- Emitter Voltage VCEO Max
50 V
Collector-Emitter Saturation Voltage
- 0.15 V
Configuration
Dual
Continuous Collector Current
0.2 A
DC Collector/Base Gain hfe Min
200
Emitter- Base Voltage VEBO
7 V
Height
0.94 mm
Length
3 mm
Maximum DC Collector Current
0.2 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
SC-74-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
380 mW
Product Type
BJTs - Bipolar Transistors
Series
HN1B01FDW1
Technology
SI
Transistor Polarity
NPN, PNP
Unit Weight
Width
1.5 mm

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HN1B01FDW1T1G Notizie

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