IXA40RG1200DHG-TUB

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specificazioni

categorie
IGBT Transistors
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Configuration
Single
Continuous Collector Current at 25 C
61 A
Gate-Emitter Leakage Current
500 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
SMPD-9
Packaging
Tube
Pd - Power Dissipation
215 W
Product Type
IGBT Transistors
Series
ISOPLUS

Ultime Recensioni

Thank You all fine, packed very well

Everything is excellent! recommend this seller!

Seems well have not tested

and whole all right. the features no more функционалу check.

Product as shown in the description, excellent seller, I recommend this seller.

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