Numero di parte IXA70R1200NA categorie IGBT Modules RoHS Scheda dati IXA70R1200NA Descrizione IGBT Modules DISC IGBT XPT-GENX3 (MINI
categorie IGBT Modules Collector- Emitter Voltage VCEO Max 1.2 kV Collector-Emitter Saturation Voltage 1.8 V Configuration Single Continuous Collector Current at 25 C 100 A Gate-Emitter Leakage Current 500 nA Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 125 C Minimum Operating Temperature - 40 C Mounting Style Screw Mount Package / Case SOT-227B-4 Packaging Tube Pd - Power Dissipation 350 W Product IGBT Silicon Modules Product Type IGBT Modules Technology SI