IXA70R1200NA

Le immagini sono solo di riferimento
Numero di parte
IXA70R1200NA
categorie
IGBT Modules
RoHS
Scheda dati
Descrizione
IGBT Modules DISC IGBT XPT-GENX3 (MINI

specificazioni

categorie
IGBT Modules
Collector- Emitter Voltage VCEO Max
1.2 kV
Collector-Emitter Saturation Voltage
1.8 V
Configuration
Single
Continuous Collector Current at 25 C
100 A
Gate-Emitter Leakage Current
500 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Mounting Style
Screw Mount
Package / Case
SOT-227B-4
Packaging
Tube
Pd - Power Dissipation
350 W
Product
IGBT Silicon Modules
Product Type
IGBT Modules
Technology
SI

Ultime Recensioni

Teşekkürler

My package arrived wet, not know where occurs this fact, but working all right

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

Works. Find the price of this product is very good

Goods came in two weeks. Well packed. Track number tracked

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