J174

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Numero di parte
J174
categorie
JFET
RoHS
Scheda dati
Descrizione
JFET JFET P-Channel -30V 50mA 360mW 3.27mW

specificazioni

categorie
JFET
Configuration
Single
Drain-Source Current at Vgs=0
- 125 mA
Gate-Source Cutoff Voltage
10 V
Id - Continuous Drain Current
- 10 nA
Mounting Style
Through Hole
Package / Case
TO-92-3
Packaging
Bulk
Pd - Power Dissipation
360 mW
Rds On - Drain-Source Resistance
85 Ohms
Series
J174
Technology
SI
Transistor Polarity
P-Channel
Type
JFET
Unit Weight
Vds - Drain-Source Breakdown Voltage
- 15 V
Vgs - Gate-Source Breakdown Voltage
30 V

Ultime Recensioni

everything as it is written in the description of the same deductible prodovtsu deserved

Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!

Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.

packed pretty good, all is ok,-seller.

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

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