R6020KNZC8

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Numero di parte
R6020KNZC8
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET Nch 600V 20A Si MOSFET

specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
10 ns
Forward Transconductance - Min
5 s
Id - Continuous Drain Current
20 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-3PF-3
Packaging
Tube
Part # Aliases
Pd - Power Dissipation
231 W
Product Type
MOSFET
Qg - Gate Charge
40 nC
Rds On - Drain-Source Resistance
170 mOhms
Rise Time
30 ns
Series
Super Junction-MOS KN
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
55 ns
Typical Turn-On Delay Time
30 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
3 V

Ultime Recensioni

Teşekkürler

fast delivery, item as described, thanks!!

Quickly came to CET, all in one package. Look at the rules

Perfectly.

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

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