- Numero di parte
- IXBA14N300HV
- categorie
- IGBT Transistors
- RoHS
- Scheda dati
- Descrizione
- IGBT Transistors Disc IGBT BiMSFT-VeryHiVolt TO-263D2
IXBA14N300HV
Le immagini sono solo di riferimento
specificazioni
- categorie
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 3000 V
- Collector-Emitter Saturation Voltage
- 2.2 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 38 A
- Continuous Collector Current Ic Max
- 120 A
- Gate-Emitter Leakage Current
- 100 nA
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Package / Case
- TO-263HV-3
- Pd - Power Dissipation
- 200 W
- Product Type
- IGBT Transistors
- Technology
- SI
Categoria di Porduct
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61,386 Prodotti
Test & Measurement
20,391 Prodotti
Ultime Recensioni
goods very well received very good quality
Fabrice Cubaynes
Takes 8 days to Japan. Good!
Alex Fragkos
packed pretty good, all is ok,-seller.
Julianah Yungkim
Thank You all fine, packed very well
Ulrich Bundke
Decent quality, not минвелл certainly, but enough decent
TEIXEIRA
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Persone che visualizzano IXBA14N300HV quindi acquistato
IXBA14N300HV Notizie
03/14/2023
03/13/2023
03/13/2023
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