R6003KND3TL1

Le immagini sono solo di riferimento
Numero di parte
R6003KND3TL1
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET 600V Vdss; 3A Id 44W Pd; TO-252

specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
40 ns
Forward Transconductance - Min
0.8 s
Id - Continuous Drain Current
3 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TO-252-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
44 W
Product Type
MOSFET
Qg - Gate Charge
8 nC
Rds On - Drain-Source Resistance
1.5 Ohms
Rise Time
17 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
32 ns
Typical Turn-On Delay Time
17 ns
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
3.5 V

Ultime Recensioni

Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!

The goods are OK, thank you dealers.

Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!

Long Service and Russia!

Everything is fine!

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