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R6009KNX

R6009KNX
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Numero di parte
R6009KNX
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET Nch 600V 9A Si MOSFET
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
28 ns
Forward Transconductance - Min
2.3 S
Id - Continuous Drain Current
9 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220FP-3
Packaging
Bulk
Part # Aliases
Pd - Power Dissipation
48 W
Product Type
MOSFET
Qg - Gate Charge
16.5 nC
Rds On - Drain-Source Resistance
500 mOhms
Rise Time
33 ns
Series
Super Junction-MOS KN
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
37 ns
Typical Turn-On Delay Time
20 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
3 V

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Ultime Recensioni

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goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
the photo in comparison with cheap. Delivery fast
The timer is running. 10 PCS. Packed properly.
Seems well have not tested
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