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QH8JA1TCR

QH8JA1TCR
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Numero di parte
QH8JA1TCR
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET 20V Pch+Pch Si MOSFET
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
65 ns, 65 ns
Forward Transconductance - Min
5.5 S, 5.5 S
Id - Continuous Drain Current
5 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
TSMT-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
1.5 W
Product Type
MOSFET
Qg - Gate Charge
10.2 nC, 10.2 nC
Rds On - Drain-Source Resistance
28 mOhms, 28 mOhms
Rise Time
32 ns, 32 ns
Technology
SI
Transistor Polarity
P-Channel
Transistor Type
2 P-Channel
Typical Turn-Off Delay Time
70 ns, 70 ns
Typical Turn-On Delay Time
11 ns, 11 ns
Vds - Drain-Source Breakdown Voltage
20 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
1.2 V

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Ultime Recensioni

Scrivi il tuo dominio
thanks for resending, this item is good !
Takes 8 days to Japan. Good!
Works. Find the price of this product is very good
High Quality driver, works excellent. It came to Moscow for 7 days.
The goods are OK, thank you dealers.
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