- Numero di parte
- R6020KNZ1C9
- categorie
- MOSFET
- RoHS
- Scheda dati
- Descrizione
- MOSFET Nch 600V 20A Si MOSFET
R6020KNZ1C9
Le immagini sono solo di riferimento
specificazioni
- categorie
- MOSFET
- Channel Mode
- Enhancement
- Configuration
- Single
- Fall Time
- 10 ns
- Forward Transconductance - Min
- 5 s
- Id - Continuous Drain Current
- 20 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- Through Hole
- Number of Channels
- 1 Channel
- Package / Case
- TO-247-3
- Packaging
- Tube
- Part # Aliases
- Pd - Power Dissipation
- 231 W
- Product Type
- MOSFET
- Qg - Gate Charge
- 40 nC
- Rds On - Drain-Source Resistance
- 170 mOhms
- Rise Time
- 30 ns
- Technology
- SI
- Transistor Polarity
- N-Channel
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 55 ns
- Typical Turn-On Delay Time
- 30 ns
- Unit Weight
- Vds - Drain-Source Breakdown Voltage
- 600 V
- Vgs - Gate-Source Voltage
- 20 V
- Vgs th - Gate-Source Threshold Voltage
- 3 V
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Ultime Recensioni
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Kai Hallaren
Takes 8 days to Japan. Good!
Alex Fragkos
Long Service and Russia!
Alex Yu
Great product. Arrived ahead of time. Thank you
Alexey Petrov
Good material. Great seller, efficient and insurance. Ok
Janos More
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Persone che visualizzano R6020KNZ1C9 quindi acquistato
R6020KNZ1C9 Notizie
03/14/2023
03/13/2023
03/13/2023
Parole chiave correlate per R602
- R6020KNZ1C9 integrato
- R6020KNZ1C9 RoHS
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- R6020KNZ1C9 Acquistare
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- R6020KNZ1C9 Scarica il pdf
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- R6020KNZ1C9 Fornitura
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