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SI1012CR-T1-GE3

SI1012CR-T1-GE3
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Numero di parte
SI1012CR-T1-GE3
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET 20V Vds 8V Vgs SC75A
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
11 ns
Forward Transconductance - Min
7.5 s
Height
0.8 mm
Id - Continuous Drain Current
600 mA
Length
1.575 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SC-75-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
240 mW
Product Type
MOSFET
Qg - Gate Charge
1.3 nC
Rds On - Drain-Source Resistance
396 mOhms
Rise Time
16 ns
Series
SI1
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
26 ns
Typical Turn-On Delay Time
11 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
20 V
Vgs - Gate-Source Voltage
4.5 V
Vgs th - Gate-Source Threshold Voltage
400 mV
Width
0.76 mm

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Ultime Recensioni

Scrivi il tuo dominio
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Yes, they are all here. :)
packed pretty good, all is ok,-seller.
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Decent quality, not минвелл certainly, but enough decent
Di Più

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Parole chiave correlate per SI10

  • SI1012CR-T1-GE3 integrato
  • SI1012CR-T1-GE3 RoHS
  • SI1012CR-T1-GE3 Scheda tecnica PDF
  • SI1012CR-T1-GE3 Scheda dati
  • SI1012CR-T1-GE3 Parte
  • SI1012CR-T1-GE3 Acquistare
  • SI1012CR-T1-GE3 Distributore
  • SI1012CR-T1-GE3 PDF
  • SI1012CR-T1-GE3 Componente
  • SI1012CR-T1-GE3 circuiti integrati
  • SI1012CR-T1-GE3 Scarica il pdf
  • SI1012CR-T1-GE3 Scarica la scheda tecnica
  • SI1012CR-T1-GE3 Fornitura
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