Numero di parte IXA4IF1200UC-TUB categorie IGBT Transistors RoHS Scheda dati IXA4IF1200UC-TUB Descrizione IGBT Transistors DISC IGBT XPT-GENX3
categorie IGBT Transistors Collector- Emitter Voltage VCEO Max 1200 V Collector-Emitter Saturation Voltage 1.8 V Configuration Single Continuous Collector Current at 25 C 9 A Gate-Emitter Leakage Current 500 nA Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 125 C Minimum Operating Temperature - 40 C Mounting Style SMD/SMT Package / Case TO-252-3 Packaging Tube Pd - Power Dissipation 45 W Product Type IGBT Transistors