IXA33IF1200HB

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specificazioni

categorie
IGBT Transistors
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Configuration
Single
Continuous Collector Current at 25 C
58 A
Continuous Collector Current Ic Max
34 A
Gate-Emitter Leakage Current
500 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Package / Case
TO-247-3
Packaging
Tube
Pd - Power Dissipation
250 W
Product Type
IGBT Transistors
Series
IXA33IF1200HB
Technology
SI
Tradename
XPT
Unit Weight

Ultime Recensioni

Teşekkürler

Yes, they are all here. :)

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

Shipping a little 1 weeks, normal packing, the procedure is complete.

The goods are OK, thank you dealers.

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