Numero di parte IXA33IF1200HB categorie IGBT Transistors RoHS Scheda dati IXA33IF1200HB Descrizione IGBT Transistors XPT IGBT Copack
categorie IGBT Transistors Collector- Emitter Voltage VCEO Max 1200 V Collector-Emitter Saturation Voltage 1.8 V Configuration Single Continuous Collector Current at 25 C 58 A Continuous Collector Current Ic Max 34 A Gate-Emitter Leakage Current 500 nA Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Package / Case TO-247-3 Packaging Tube Pd - Power Dissipation 250 W Product Type IGBT Transistors Series IXA33IF1200HB Technology SI Tradename XPT Unit Weight