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ZVN2110GTA

ZVN2110GTA
Le immagini sono solo di riferimento
Numero di parte
ZVN2110GTA
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET N-Chnl 100V
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
8 ns
Forward Transconductance - Min
250 S
Height
1.65 mm
Id - Continuous Drain Current
500 mA
Length
6.7 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-223-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
2 W
Product Type
MOSFET
Rds On - Drain-Source Resistance
4 Ohms
Rise Time
4 ns
Series
ZVN2110
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Type
FET
Typical Turn-Off Delay Time
8 ns
Typical Turn-On Delay Time
4 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
100 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
800 mV
Width
3.7 mm

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Ultime Recensioni

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Hello! Order received, very happy. Thank you very much!
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Decent quality, not минвелл certainly, but enough decent
fast delivery
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
Di Più

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