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RJ1P12BBDTLL

RJ1P12BBDTLL
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Numero di parte
RJ1P12BBDTLL
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET NCH 100V 120A POWER
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
54 ns
Id - Continuous Drain Current
120 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TO-263-3
Packaging
Reel
Packaging
Cut Tape
Pd - Power Dissipation
178 W
Product Type
MOSFET
Qg - Gate Charge
80 nC
Rds On - Drain-Source Resistance
5.8 mOhms
Rise Time
33 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
125 ns
Typical Turn-On Delay Time
37 ns
Vds - Drain-Source Breakdown Voltage
100 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2 V

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Very good!
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goods very well received very good quality
all exactly and work. радиолюбителя useful set to, thank you)
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