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TN0610N3-G-P003

TN0610N3-G-P003
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Numero di parte
TN0610N3-G-P003
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET N-CH Enhancmnt Mode MOSFET
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
16 ns
Height
5.33 mm
Id - Continuous Drain Current
500 mA
Length
5.21 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-92-3
Packaging
Reel
Packaging
Cut Tape
Pd - Power Dissipation
1 W
Product
MOSFET Small Signal
Product Type
MOSFET
Rds On - Drain-Source Resistance
15 Ohms
Rise Time
14 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
16 ns
Typical Turn-On Delay Time
6 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
100 V
Vgs - Gate-Source Voltage
20 V
Width
4.19 mm

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Received, Fast shipping, not checked yet
Thank You all fine, packed very well
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
Seems well have not tested
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Parole chiave correlate per TN06

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