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R6024KNZC8

R6024KNZC8
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Numero di parte
R6024KNZC8
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET Nch 600V 24A Si MOSFET
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
12 ns
Forward Transconductance - Min
6.5 S
Id - Continuous Drain Current
24 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-3PF-3
Packaging
Tube
Part # Aliases
Pd - Power Dissipation
245 W
Product Type
MOSFET
Qg - Gate Charge
45 nC
Rds On - Drain-Source Resistance
150 mOhms
Rise Time
50 ns
Series
Super Junction-MOS KN
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
60 ns
Typical Turn-On Delay Time
30 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
3 V

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Takes 8 days to Japan. Good!
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Works. Find the price of this product is very good
The goods are OK, thank you dealers.
Looks good
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