TP0606N3-G-P002

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Numero di parte
TP0606N3-G-P002
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET P-CH Enhancmnt Mode MOSFET

specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
15 ns
Height
5.33 mm
Id - Continuous Drain Current
320 mA
Length
5.21 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-92-3
Packaging
Reel
Packaging
Cut Tape
Pd - Power Dissipation
1 W
Product
MOSFET Small Signal
Product Type
MOSFET
Rds On - Drain-Source Resistance
7 Ohms
Rise Time
15 ns
Technology
SI
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
20 ns
Typical Turn-On Delay Time
10 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
20 V
Width
4.19 mm

Ultime Recensioni

Thanks for your feedback!

Quick delivery. Secure packing. Excellent product. Thank you

all exactly and work. радиолюбителя useful set to, thank you)

Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!

the photo in comparison with cheap. Delivery fast

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