R6007ENX

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Numero di parte
R6007ENX
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET 10V Drive Nch MOSFET

specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
35 ns
Id - Continuous Drain Current
7 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220FP-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
46 W
Product Type
MOSFET
Qg - Gate Charge
20 nC
Rds On - Drain-Source Resistance
570 mOhms
Rise Time
25 ns
Series
Super Junction-MOS EN
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
70 ns
Typical Turn-On Delay Time
25 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
2 V

Ultime Recensioni

Отличный продавец . Рекомендую.+++

Perfectly.

Fast shippng. Good quality. I recomend this seller.

Works. Recommend

the photo in comparison with cheap. Delivery fast

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