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R6024ENZ1C9

R6024ENZ1C9
Le immagini sono solo di riferimento
Numero di parte
R6024ENZ1C9
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET 10V Drive Nch MOSFET
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
50 ns
Forward Transconductance - Min
6.5 S
Id - Continuous Drain Current
24 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-247-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
120 W
Product Type
MOSFET
Qg - Gate Charge
70 nC
Rds On - Drain-Source Resistance
150 mOhms
Rise Time
50 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
180 ns
Typical Turn-On Delay Time
35 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2 V

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Ultime Recensioni

Scrivi il tuo dominio
Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
Works. Find the price of this product is very good
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
the photo in comparison with cheap. Delivery fast
Di Più

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