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R6011ENX

R6011ENX
Le immagini sono solo di riferimento
Numero di parte
R6011ENX
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET 10V Drive Nch MOSFET
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
35 ns
Id - Continuous Drain Current
11 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220FP-3
Packaging
Cut Tape
Packaging
Reel
Part # Aliases
Pd - Power Dissipation
53 W
Product Type
MOSFET
Qg - Gate Charge
32 nC
Rds On - Drain-Source Resistance
340 mOhms
Rise Time
40 ns
Series
Super Junction-MOS EN
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
90 ns
Typical Turn-On Delay Time
25 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
2 V

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Ultime Recensioni

Scrivi il tuo dominio
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
I received the product right, thank you very much 2018/12/03 ★★★★★
and whole all right. the features no more функционалу check.
Product Description. highly recommend.
Di Più

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