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R6047ENZ1C9

R6047ENZ1C9
Le immagini sono solo di riferimento
Numero di parte
R6047ENZ1C9
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET 10V Drive Nch MOSFET
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
100 ns
Forward Transconductance - Min
13 S
Id - Continuous Drain Current
47 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-247-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
120 W
Product Type
MOSFET
Qg - Gate Charge
145 nC
Rds On - Drain-Source Resistance
72 mOhms
Rise Time
100 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
260 ns
Typical Turn-On Delay Time
50 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2 V

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Ultime Recensioni

Scrivi il tuo dominio
packed pretty good, all is ok,-seller.
High Quality driver, works excellent. It came to Moscow for 7 days.
Decent quality, not минвелл certainly, but enough decent
Goods came in two weeks. Well packed. Track number tracked
Fast shippng. Good quality. I recomend this seller.
Di Più

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R6047ENZ1C9 Notizie

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Parole chiave correlate per R604

  • R6047ENZ1C9 integrato
  • R6047ENZ1C9 RoHS
  • R6047ENZ1C9 Scheda tecnica PDF
  • R6047ENZ1C9 Scheda dati
  • R6047ENZ1C9 Parte
  • R6047ENZ1C9 Acquistare
  • R6047ENZ1C9 Distributore
  • R6047ENZ1C9 PDF
  • R6047ENZ1C9 Componente
  • R6047ENZ1C9 circuiti integrati
  • R6047ENZ1C9 Scarica il pdf
  • R6047ENZ1C9 Scarica la scheda tecnica
  • R6047ENZ1C9 Fornitura
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  • R6047ENZ1C9 Scheda dati
  • R6047ENZ1C9 Immagine
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