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R6020ENZ1C9

R6020ENZ1C9
Le immagini sono solo di riferimento
Numero di parte
R6020ENZ1C9
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET 10V Drive Nch MOSFET
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
67 ns
Forward Transconductance - Min
5 s
Id - Continuous Drain Current
20 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-247-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
120 W
Product Type
MOSFET
Qg - Gate Charge
60 nC
Rds On - Drain-Source Resistance
170 mOhms
Rise Time
53 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
150 ns
Typical Turn-On Delay Time
35 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2 V

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Ultime Recensioni

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Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Decent quality, not минвелл certainly, but enough decent
Goods came in two weeks. Well packed. Track number tracked
Shipping a little 1 weeks, normal packing, the procedure is complete.
Works. Recommend
Di Più

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