- Numero di parte
- R6046FNZC8
- categorie
- MOSFET
- RoHS
- Scheda dati
- Descrizione
- MOSFET SILICON N-CHANNEL MOSFET; 600V
R6046FNZC8
Le immagini sono solo di riferimento
specificazioni
- categorie
- MOSFET
- Configuration
- Single
- Fall Time
- 80 ns
- Id - Continuous Drain Current
- 46 A
- Mounting Style
- Through Hole
- Number of Channels
- 1 Channel
- Package / Case
- TO-220-3
- Packaging
- Bulk
- Part # Aliases
- Pd - Power Dissipation
- 120 W
- Product Type
- MOSFET
- Qg - Gate Charge
- 150 nC
- Rds On - Drain-Source Resistance
- 93 mOhms
- Rise Time
- 150 ns
- Technology
- SI
- Transistor Polarity
- N-Channel
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 230 ns
- Typical Turn-On Delay Time
- 77 ns
- Unit Weight
- Vds - Drain-Source Breakdown Voltage
- 600 V
- Vgs - Gate-Source Voltage
- 30 V
Categoria di Porduct
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Ultime Recensioni
Thanks for your feedback!
Anna Grden
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Boris Arshinov
Perfectly.
Sensofar Tech, SL
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Sergio Garcia Carreon
Works. Find the price of this product is very good
Maxim Krasnov
Potrebbe piacerti anche
Persone che visualizzano R6046FNZC8 quindi acquistato
R6046FNZC8 Notizie
03/14/2023
03/13/2023
03/13/2023
Parole chiave correlate per R604
- R6046FNZC8 integrato
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