Numero di parte R6006ANX categorie MOSFET RoHS Scheda dati R6006ANX Descrizione MOSFET 10V DRIVE NCH MOSFET
categorie MOSFET Configuration Single Fall Time 35 ns Forward Transconductance - Min 1.7 S Id - Continuous Drain Current 6 A Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220FP-3 Packaging Bulk Part # Aliases Pd - Power Dissipation 40 W Product Type MOSFET Qg - Gate Charge 15 nC Rds On - Drain-Source Resistance 1.2 Ohms Rise Time 18 ns Technology SI Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 50 ns Typical Turn-On Delay Time 22 ns Unit Weight Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage 30 V