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R6046ANZC8

R6046ANZC8
Numero di parte
R6046ANZC8
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET SILICON N-Ch MOS FET
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
100 ns
Id - Continuous Drain Current
46 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Number of Channels
1 Channel
Packaging
Bulk
Part # Aliases
Pd - Power Dissipation
130 W
Product Type
MOSFET
Qg - Gate Charge
150 nC
Rds On - Drain-Source Resistance
65 mOhms
Rise Time
130 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
230 ns
Typical Turn-On Delay Time
60 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
2.5 V

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Ultime Recensioni

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Empresa muy seria , el envió llego como veis en las fotos de manera muy segura , todos los componentes son de gran calidad , aconsejo TNT frente a DHL como compa?ía para el envió .
Yes, they are all here. :)
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Everything is fine!
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Parole chiave correlate per R604

  • R6046ANZC8 integrato
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  • R6046ANZC8 Acquistare
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