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R6002ENDTL

R6002ENDTL
Le immagini sono solo di riferimento
Numero di parte
R6002ENDTL
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET Nch 600V 2A Power MOSFET
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
60 ns
Forward Transconductance - Min
500 ms
Id - Continuous Drain Current
1.7 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TO-252-3
Packaging
Reel
Part # Aliases
Pd - Power Dissipation
26 W
Product Type
MOSFET
Qg - Gate Charge
6.5 nC
Rds On - Drain-Source Resistance
2.8 Ohms
Rise Time
16 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
25 ns
Typical Turn-On Delay Time
12 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2 V

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Ultime Recensioni

Scrivi il tuo dominio
Takes 8 days to Japan. Good!
Works. Find the price of this product is very good
Works. Recommend
Long Service and Russia!
The timer is running. 10 PCS. Packed properly.
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R6002ENDTL Notizie

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