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R6004ENDTL

R6004ENDTL
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Numero di parte
R6004ENDTL
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET 10V Drive Nch MOSFET
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
40 ns
Forward Transconductance - Min
1.5 s
Height
2.5 mm
Id - Continuous Drain Current
4 A
Length
6.7 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TO-252-3
Packaging
Reel
Part # Aliases
Pd - Power Dissipation
20 W
Product
MOSFET
Product Type
MOSFET
Qg - Gate Charge
15 nC
Rds On - Drain-Source Resistance
980 mOhms
Rise Time
22 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Type
Power MOSFET
Typical Turn-Off Delay Time
55 ns
Typical Turn-On Delay Time
22 ns
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2 V
Width
5.8 mm

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Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Takes 8 days to Japan. Good!
Long Service and Russia!
Great product. Arrived ahead of time. Thank you
Good material. Great seller, efficient and insurance. Ok
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