IFCM20T65GDXKMA1

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specificazioni

categorie
IGBT Modules
Collector- Emitter Voltage VCEO Max
650 V
Collector-Emitter Saturation Voltage
1.7 V
Configuration
2-Phase
Continuous Collector Current at 25 C
20 A
Gate-Emitter Leakage Current
1 mA
Maximum Gate Emitter Voltage
-
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Package / Case
MDIP-24
Packaging
Tube
Part # Aliases
Pd - Power Dissipation
52.3 W
Product
IGBT Silicon Modules
Product Type
IGBT Modules
Series
CIPOS Mini
Technology
SI
Tradename
CIPOS

Ultime Recensioni

Takes 8 days to Japan. Good!

Yes, they are all here. :)

packed pretty good, all is ok,-seller.

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

Decent quality, not минвелл certainly, but enough decent

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