Numero di parte IXA30RG1200DHG-TUB categorie IGBT Transistors RoHS Scheda dati IXA30RG1200DHG-TUB Descrizione IGBT Transistors IXA30RG1200DHGLB-TUB
categorie IGBT Transistors Collector- Emitter Voltage VCEO Max 1200 V Collector-Emitter Saturation Voltage 1.8 V Configuration Single Continuous Collector Current at 25 C 43 A Gate-Emitter Leakage Current 500 nA Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case SMPD-9 Packaging Tube Pd - Power Dissipation 147 W Product Type IGBT Transistors Series ISOPLUS