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GB100XCP12-227

GB100XCP12-227
Le immagini sono solo di riferimento
Numero di parte
GB100XCP12-227
categorie
IGBT Modules
RoHS
Scheda dati
Descrizione
IGBT Modules 1200V 100A SIC IGBT CoPak
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specificazioni

categorie
IGBT Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.9 V
Configuration
IGBT-Inverter
Gate-Emitter Leakage Current
400 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
SOT-227
Packaging
Bulk
Product
IGBT Silicon Carbide Modules
Product Type
IGBT Modules
Series
GB100XCP12
Technology
SiC
Unit Weight

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Ultime Recensioni

Scrivi il tuo dominio
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Everything is fine!
Seems well have not tested
Looks good
Di Più

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Parole chiave correlate per GB10

  • GB100XCP12-227 integrato
  • GB100XCP12-227 RoHS
  • GB100XCP12-227 Scheda tecnica PDF
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