Numero di parte IXA37IF1200HJ categorie IGBT Transistors RoHS Scheda dati IXA37IF1200HJ Descrizione IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBTs
categorie IGBT Transistors Collector- Emitter Voltage VCEO Max 1200 V Collector-Emitter Saturation Voltage 1.8 V Configuration Single Continuous Collector Current at 25 C 58 A Continuous Collector Current Ic Max 37 A Gate-Emitter Leakage Current 500 nA Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Package / Case ISOPLUS 247-3 Packaging Tube Pd - Power Dissipation 195 W Product Type IGBT Transistors Series IXA37IF1200HJ Technology SI Tradename XPT Unit Weight