- Numero di parte
- IXA45IF1200HB
- categorie
- IGBT Transistors
- RoHS
- Scheda dati
- Descrizione
- IGBT Transistors N-Channel: Power MOSFET w/Fast Diode
IXA45IF1200HB
Le immagini sono solo di riferimento
specificazioni
- categorie
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 1200 V
- Collector-Emitter Saturation Voltage
- 1.8 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 78 A
- Continuous Collector Current Ic Max
- 45 A
- Gate-Emitter Leakage Current
- 500 nA
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- Through Hole
- Package / Case
- TO-247-3
- Packaging
- Tube
- Pd - Power Dissipation
- 325 W
- Product Type
- IGBT Transistors
- Series
- IXA45IF1200HB
- Technology
- SI
- Tradename
- XPT
- Unit Weight
Categoria di Porduct
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Ultime Recensioni
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Kai Hallaren
Takes 8 days to Japan. Good!
Alex Fragkos
Long Service and Russia!
Alex Yu
Great product. Arrived ahead of time. Thank you
Alexey Petrov
Good material. Great seller, efficient and insurance. Ok
Janos More
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Persone che visualizzano IXA45IF1200HB quindi acquistato
IXA45IF1200HB Notizie
03/14/2023
03/13/2023
03/13/2023
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