R6006KND3TL1

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Numero di parte
R6006KND3TL1
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET NCH 600V 6A POWER MOSFET

specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
30 ns
Id - Continuous Drain Current
6 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TO-252-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
70 W
Product Type
MOSFET
Qg - Gate Charge
12 nC
Rds On - Drain-Source Resistance
830 mOhms
Rise Time
22 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
30 ns
Typical Turn-On Delay Time
17 ns
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
3.5 V

Ultime Recensioni

goods very well received very good quality

fast delivery, item as described, thanks!!

Received, Fast shipping, not checked yet

Quick delivery. Secure packing. Excellent product. Thank you

it is safe and sound all, thank you seller!

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