U430

Le immagini sono solo di riferimento
Numero di parte
U430
categorie
JFET
RoHS
Scheda dati
Descrizione
JFET JFET N-Channel -25V 30mA 500mW -150 Igss

specificazioni

categorie
JFET
Configuration
Dual
Drain-Source Current at Vgs=0
30 mA
Forward Transconductance - Min
10 ms
Gate-Source Cutoff Voltage
- 4 V
Id - Continuous Drain Current
1 nA
Mounting Style
Through Hole
Package / Case
TO-78-8
Packaging
Bulk
Pd - Power Dissipation
500 mW (1/2 W)
Series
U430
Technology
SI
Transistor Polarity
N-Channel
Type
JFET
Vds - Drain-Source Breakdown Voltage
10 V
Vgs - Gate-Source Breakdown Voltage
- 25 V

Ultime Recensioni

Very good!

all exactly and work. радиолюбителя useful set to, thank you)

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Perfectly.

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

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