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IXA30RG1200DHG-TRR

IXA30RG1200DHG-TRR
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specificazioni

categorie
IGBT Transistors
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Configuration
Single
Continuous Collector Current at 25 C
43 A
Gate-Emitter Leakage Current
500 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
SMPD-9
Packaging
Reel
Pd - Power Dissipation
147 W
Product Type
IGBT Transistors
Series
ISOPLUS

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Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Takes 8 days to Japan. Good!
Long Service and Russia!
Great product. Arrived ahead of time. Thank you
Good material. Great seller, efficient and insurance. Ok
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