Numero di parte R6004KNX categorie MOSFET RoHS Scheda dati R6004KNX Descrizione MOSFET Nch 600V 4A Si MOSFET
categorie MOSFET Channel Mode Enhancement Configuration Single Fall Time 25 ns Forward Transconductance - Min 1.5 s Id - Continuous Drain Current 4 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220FP-3 Packaging Bulk Part # Aliases Pd - Power Dissipation 40 W Product Type MOSFET Qg - Gate Charge 10.2 nC Rds On - Drain-Source Resistance 900 mOhms Rise Time 10 ns Series Super Junction-MOS KN Technology SI Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 30 ns Typical Turn-On Delay Time 15 ns Unit Weight Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 3 V