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GS-065-008-1-L

GS-065-008-1-L
Le immagini sono solo di riferimento
Numero di parte
GS-065-008-1-L
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET 650V, 8 A, E-Mode GaN, Engineer Samples
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Id - Continuous Drain Current
8 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Moisture Sensitive
Yes
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
PDFN-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Product Type
MOSFET
Qg - Gate Charge
1.5 nC
Rds On - Drain-Source Resistance
541 mOhms
Series
GS-065
Technology
GaN Si
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Voltage
- 10 V to 7 V
Vgs th - Gate-Source Threshold Voltage
1.4 V

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Ultime Recensioni

Scrivi il tuo dominio
everything as it is written in the description of the same deductible prodovtsu deserved
packed pretty good, all is ok,-seller.
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Shipping a little 1 weeks, normal packing, the procedure is complete.
Great product. Arrived ahead of time. Thank you
Di Più

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