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R6011END3TL1

R6011END3TL1
Le immagini sono solo di riferimento
Numero di parte
R6011END3TL1
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET NCH 600V 11A POWER MOSFET
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
35 ns
Id - Continuous Drain Current
11 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TO-252-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
124 W
Product Type
MOSFET
Qg - Gate Charge
32 nC
Rds On - Drain-Source Resistance
390 mOhms
Rise Time
40 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
90 ns
Typical Turn-On Delay Time
25 ns
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2 V

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Ultime Recensioni

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Thank You all fine, packed very well
Everything is excellent! recommend this seller!
Seems well have not tested
and whole all right. the features no more функционалу check.
Product as shown in the description, excellent seller, I recommend this seller.
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