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R6011KNX

R6011KNX
Le immagini sono solo di riferimento
Numero di parte
R6011KNX
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET Nch 600V 11A Si MOSFET
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
20 ns
Forward Transconductance - Min
2.9 S
Id - Continuous Drain Current
11 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220FP-3
Packaging
Bulk
Part # Aliases
Pd - Power Dissipation
53 W
Product Type
MOSFET
Qg - Gate Charge
22 nC
Rds On - Drain-Source Resistance
340 mOhms
Rise Time
25 ns
Series
Super Junction-MOS KN
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
40 ns
Typical Turn-On Delay Time
20 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
3 V

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