- Numero di parte
- IXA55I1200HJ
- categorie
- IGBT Transistors
- RoHS
- Scheda dati
- Descrizione
- IGBT Transistors XPT 1200V 84A Single IGBT
IXA55I1200HJ
Le immagini sono solo di riferimento
specificazioni
- categorie
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 1200 V
- Collector-Emitter Saturation Voltage
- 1.8 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 84 A
- Continuous Collector Current Ic Max
- 54 A
- Gate-Emitter Leakage Current
- 500 nA
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- Through Hole
- Package / Case
- ISOPLUS 247-3
- Packaging
- Tube
- Pd - Power Dissipation
- 290 W
- Product Type
- IGBT Transistors
- Series
- IXA55I1200HJ
- Technology
- SI
- Tradename
- XPT
- Unit Weight
Categoria di Porduct
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Ultime Recensioni
Very good!
Manuel MAde
Quick delivery. Secure packing. Excellent product. Thank you
BHADRESH PATEL
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Eitan Hammami
Perfectly.
Sensofar Tech, SL
Everything is excellent! recommend this seller!
Stoyan Chaykov
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Persone che visualizzano IXA55I1200HJ quindi acquistato
IXA55I1200HJ Notizie
03/14/2023
03/13/2023
03/13/2023
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