SI1012R-T1-GE3

Le immagini sono solo di riferimento
Numero di parte
SI1012R-T1-GE3
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET 20V 0.6A 175mW 700mohm @ 4.5V

specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
11 ns
Forward Transconductance - Min
1 s
Height
0.8 mm
Id - Continuous Drain Current
600 mA
Length
1.575 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SC-75A-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
175 mW
Product Type
MOSFET
Qg - Gate Charge
750 pC
Rds On - Drain-Source Resistance
700 mOhms
Rise Time
5 ns
Series
SI1
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
25 ns
Typical Turn-On Delay Time
5 ns
Vgs - Gate-Source Voltage
4.5 V
Vgs th - Gate-Source Threshold Voltage
450 mV
Width
0.76 mm

Ultime Recensioni

Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!

Perfectly.

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!

the photo in comparison with cheap. Delivery fast

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