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RJ1G12BGNTLL

RJ1G12BGNTLL
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Numero di parte
RJ1G12BGNTLL
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET NCH 40V 120A POWER
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
130 ns
Id - Continuous Drain Current
120 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TO-263AB-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
178 W
Product Type
MOSFET
Qg - Gate Charge
165 nC
Rds On - Drain-Source Resistance
1.86 mOhms
Rise Time
33 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
230 ns
Typical Turn-On Delay Time
40 ns
Vds - Drain-Source Breakdown Voltage
40 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1 V

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Ultime Recensioni

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Teşekkürler
fast delivery, item as described, thanks!!
Quickly came to CET, all in one package. Look at the rules
Perfectly.
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Di Più

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