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R6009END3TL1

R6009END3TL1
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Numero di parte
R6009END3TL1
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET NCH 600V 9A POWER MOSFET
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
30 ns
Id - Continuous Drain Current
9 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TO-252-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
94 W
Product Type
MOSFET
Qg - Gate Charge
23 nC
Rds On - Drain-Source Resistance
535 mOhms
Rise Time
35 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
75 ns
Typical Turn-On Delay Time
25 ns
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2 V

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Thanks for your feedback!
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Perfectly.
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Works. Find the price of this product is very good
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