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TN0106N3-G-P003

TN0106N3-G-P003
Le immagini sono solo di riferimento
Numero di parte
TN0106N3-G-P003
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET N-Channel DMOS FET Low Threshold 2.0V
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
3 ns
Id - Continuous Drain Current
350 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-92-3
Packaging
Cut Tape
Packaging
Reel
Pd - Power Dissipation
1 W
Product
MOSFET Small Signal
Product Type
MOSFET
Qg - Gate Charge
-
Rds On - Drain-Source Resistance
3 Ohms
Rise Time
3 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
6 ns
Typical Turn-On Delay Time
2 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2 V

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fast delivery, item as described, thanks!!
all exactly and work. радиолюбителя useful set to, thank you)
Everything as it is written in the description of the same deductible prodovtsu deserved 5
fast delivery
The goods are OK, thank you dealers.
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