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SI1016CX-T1-GE3

SI1016CX-T1-GE3
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Numero di parte
SI1016CX-T1-GE3
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET 20V Vds 8V Vgs SC89-6 N&P PAIR
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
8 ns, 11 ns
Forward Transconductance - Min
1 S, 2 S
Id - Continuous Drain Current
350 mA, 500 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
SC-89-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
220 mW
Product Type
MOSFET
Qg - Gate Charge
1.3 nC, 1.65 nC
Rds On - Drain-Source Resistance
396 mOhms, 756 mOhms
Rise Time
10 ns, 16 ns
Series
SI1
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel, P-Channel
Transistor Type
1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time
10 ns, 26 ns
Typical Turn-On Delay Time
9 ns, 11 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
20 V
Vgs - Gate-Source Voltage
8 V
Vgs th - Gate-Source Threshold Voltage
400 mV

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everything as it is written in the description of the same deductible prodovtsu deserved
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packed pretty good, all is ok,-seller.
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
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Parole chiave correlate per SI10

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  • SI1016CX-T1-GE3 Scheda tecnica PDF
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  • SI1016CX-T1-GE3 Distributore
  • SI1016CX-T1-GE3 PDF
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