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R6020KNX

R6020KNX
Le immagini sono solo di riferimento
Numero di parte
R6020KNX
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET Nch 600V 20A Si MOSFET
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
10 ns
Forward Transconductance - Min
5 s
Id - Continuous Drain Current
20 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220FP-3
Packaging
Bulk
Part # Aliases
Pd - Power Dissipation
68 W
Product Type
MOSFET
Qg - Gate Charge
40 nC
Rds On - Drain-Source Resistance
170 mOhms
Rise Time
30 ns
Series
Super Junction-MOS KN
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
55 ns
Typical Turn-On Delay Time
30 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
3 V

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Ultime Recensioni

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Works. Find the price of this product is very good
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Works. Recommend
Still not tasted, looks good. Fast Shipping, very good Price. Like again
No problem, with no contact, selectively checked a few pieces, such as running
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