Numero di parte 1HN04CH-TL-W categorie MOSFET RoHS Scheda dati 1HN04CH-TL-W Descrizione MOSFET NCH 120MA 100V SOT23
categorie MOSFET Channel Mode Enhancement Configuration Single Fall Time 39 ns Forward Transconductance - Min 260 ms Id - Continuous Drain Current 270 mA Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SOT-23-3 Packaging MouseReel Packaging Reel Packaging Cut Tape Pd - Power Dissipation 600 mW Product Type MOSFET Qg - Gate Charge 900 pC Rds On - Drain-Source Resistance 6 Ohms Rise Time 7.4 ns Series 1HN04CH Technology SI Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 58 ns Typical Turn-On Delay Time 10 ns Unit Weight Vds - Drain-Source Breakdown Voltage 100 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 1.2 V