SI1016X-T1-GE3

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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Forward Transconductance - Min
0.4 S, 1 S
Id - Continuous Drain Current
400 mA, 600 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
SOT-563-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
280 mW, 280 mW
Product Type
MOSFET
Qg - Gate Charge
750 pC, 1500 pC
Rds On - Drain-Source Resistance
750 mOhms, 1.2 Ohms
Series
SI1
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel, P-Channel
Transistor Type
1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time
25 ns, 35 ns
Typical Turn-On Delay Time
5 ns, 5 ns
Unit Weight
Vgs - Gate-Source Voltage
4.5 V
Vgs th - Gate-Source Threshold Voltage
450 mV

Ultime Recensioni

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