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R6015ENX

R6015ENX
Le immagini sono solo di riferimento
Numero di parte
R6015ENX
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET 10V Drive Nch MOSFET
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
45 ns
Id - Continuous Drain Current
15 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220FP-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
60 W
Product Type
MOSFET
Qg - Gate Charge
40 nC
Rds On - Drain-Source Resistance
260 mOhms
Rise Time
55 ns
Series
Super Junction-MOS EN
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
105 ns
Typical Turn-On Delay Time
30 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2 V

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Ultime Recensioni

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Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Hello! Order received, very happy. Thank you very much!
packed pretty good, all is ok,-seller.
Perfectly.
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